Electrical Conduction Mechanism in the High Temperatures for Thin-film Transistor Utilizing Tunnel Effect

The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an assumption of the electron effective mass of 0.25 corresponding to the one-band model. The DT from the tail of the Fermi-Dirac distribution of Al electrode to n + doping area of poly-Si influences greatly on the drain currents. Keyword: Tunneling-Dielectric TFT, SiNX, Direct tunneling, High temperature.